absolute maximum ratings parameter IRFI260 units i d @ v gs = 10v, t c = 25c continuous drain current 45* i d @ v gs = 10v, t c = 100c continuous drain current 29 i dm pulsed drain current ? 180 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/k ? v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 700 mj i ar avalanche current ? 45 a e ar repetitive avalanche energy ? 30 mj dv/dt peak diode recovery dv/dt ? 4.3 v/ns t j operating junction -55 to 150 t stg stor age t emperature range o c lead t emperature 300 (0.063 in. (1.6mm) from case for 10 sec.) weight 10.9 (typical) g n-channel provisional data sheet no. pd 9.809 200 v olt, 0.060 w w w w w , hexfet a IRFI260 hexfet ? transistor hexfet technology is the key to international rectifiers advanced line of power mosfet transis- tors. the efficient geometry design achieves very low on-state resistance combined with high trans- conductance. hexfet transistors also feature all of the well-es- tablished advantages of mosfets, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. they are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliability is required. the hexfet transistors totally isolated package eliminates the need for additional isolating material between the device and the heatsink. this improves thermal efficiency and reduces drain capacitance. product summary part number bv dss r ds(on) i d IRFI260 200v 0.060 w 45a* features: n hermetically sealed n electrically isolated n simple drive requirements n ease of paralleling n ceramic eyelets * i d current limited by pin diameter
electrical characteristics @ tj = 25c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 200 v v gs = 0v, i d = 1.0 ma d bv dss / d t j temp. coefficient of breakdown voltage 0.24 v/c reference to 25c, i d = 1.0 ma r ds(on) static drain-to-source 0.060 v gs = 10v, i d =29a ? on-state resistance 0.068 w v gs = 10v, i d = 45a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 250a g fs forward tr ansconductance 22 s ( )v ds 3 15v, i ds = 29a ? i dss zero gate v oltage drain current 25 a v ds =0.8 x max rating,v gs =0v 250 v ds = 0.8 x max rating v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 na v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 230 v gs =10v, i d = 45a q gs gate-to-source charge 40 nc v ds = max. rating x 0.5 q gd gate-to-drain (miller) charge 110 t d(on) turn-on delay time 29 v dd = 100v, i d =45a, t r rise time 120 ns r g = 2.35 w, v gs =10v t d(off) turn-off delay time 110 t f fall time 92 l d internal drain inductance 8.7 l s internal source inductance 8.7 nh c iss input capacitance 5100 v gs = 0v, v ds = 25v c oss output capacitance 1100 pf f = 1.0 mhz c rss reverse tr ansfer capacitance 280 IRFI260 device measured from the drain lead, 6mm (0.25 in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances.
thermal resistance parameter min. typ. max. units test conditions r thjc junction-to-case 0.42 r thja junction-to-ambient 30 k/w ? typical socket mount r thcs case-to-sink 0.21 mounting surface flat, smooth source-drain diode ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) 45* modified mosfet symbol showing the i sm pulse source current (body diode) ? 180 a integral reverse p-n junction rectifier. v sd diode forw ard v oltage 1.8 v t j = 25c, i s = 45a, v gs = 0v ? t rr reverse recovery time 420 ns t j = 25c, i f = 45a, di/dt 100a/ m s q rr reverse recovery charge 4.9 m cv dd 50v ? t on forward tur n-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . IRFI260 device ? repetitive rating; pulse width limited by maximum junction temperature. ? @ v dd = 50v, star ting t j = 25c, e as = [0.5 * l * (i l 2 ) * [bv dss /(bv dss -v dd )] peak i l = 45a, v gs = 10v, 25 r g 200 w ? i sd 45a, di/dt 130 a/ m s, v dd bv dss , t j 150c suggested rg = 2.35 w ? pulse width 300 m s; duty cycle 2% ? k/w = c/w w/k = w/c
IRFI260 device case outline and dimensions to-259aa world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 7/96 notes: 1. dimensioning and tolerancing per ansi y14.5m - 1982. 2. all dimensions in millimeters (inches) caution beryllia w arning per mil-prf-19500 packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxides packages shall not be placed in acids that will produce fumes containing beryllium. legend: 1. drain 2.. source 3. gate
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